SeS2 assisted bonding of GaAs to Si : A new method for wafer bonding
SeS2 assisted bonding of GaAs to Si : A new method for wafer bonding
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DOI：
10.1016/s0169-4332(00)00043-x
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发表时间：
2000-06
影响因子：
6.7
通讯作者：
J. Arokiaraj;T. Soga;T. Jimbo;M. Umeno
中科院分区：
文献类型：
--
作者：
J. Arokiaraj;T. Soga;T. Jimbo;M. Umeno
提出了一种新的表面改性化学键合技术（CBSM），用于键合Si衬底上的GaAs薄膜。结合外延剥离（ELO）工艺从其原始衬底上分离的键合GaAs外延层具有光滑的表面形貌，并在整个界面上表现出均匀的键合。双晶X射线衍射（DCD）的X射线半峰全宽（FWHM）为16弧秒，并且光致发光（PL）测量没有峰值波长偏移，反映了结合膜的高结晶质量。通过XPS的深度分布揭示了在界面处的表面改性的发生。表面改性导致形成Ga2Se3和SiS2，这归因于GaAs和Si之间的强和高质量的键合。
A new technique namely chemical bonding by surface modification (CBSM) has been developed to bond GaAs thin films on Si substrate. The bonded GaAs epilayer, detached from its orginal substrate in conjunction with epitaxial lift-off (ELO) process, possessed smooth surface morphology and exhibited uniform bonding across the interface. The X-ray full width at half maximum (FWHM) of 16 arc-sec from double crystal X-ray diffraction (DCD) and no peak wavelength shift from photoluminscence (PL) measurements reflected the high crystalline quality of the bonded films. The depth profile by XPS revealed at the interface the occurrence of surface modification. The surface modification resulted in the formation of Ga2Se3and SiS2, which attributed for the strong and high quality bonding between GaAs and Si.