Structure and ferroelectric properties of sputtered Pb(Mn, Nb)O3-PZT thin films
Structure and ferroelectric properties of sputtered Pb(Mn, Nb)O3-PZT thin films
复制标题
溅射Pb(Mn,Nb)O3-PZT薄膜的结构和铁电性能
DOI：
10.1109/ultsym.2010.5935495
复制
发表时间：
2010
期刊：
影响因子：
--
通讯作者：
H. Kotera
中科院分区：
文献类型：
--
作者：
K. Wasa;K. Kawano;H. Adachi;T. Matsushima;K. Nishida;T. Yamamoto;I. Kanno;H. Kotera
采用磁控溅射法在（001）SrTiO 3和（001）MgO衬底上制备了PZT基三元钙钛矿结构xPb（Mn，Nb）O3-（1−x）PZT异质外延薄膜。异质外延薄膜具有单一的c畴/单晶结构，在x=0.06，膜厚为300 nm-5 mm时，具有高的Ec，Ec> 180 kV/cm的硬压电性能。当膜厚> 0.5mm时，三元钙钛矿薄膜呈现弛豫结构。然而，居里温度Tc为600°C，比块体陶瓷值高250°C。溅射薄膜的剩余极化强度高达100 mC/cm ~ 2。平面压缩模型被排除的机制，目前较高的Tc现象，因为溅射薄膜显示松弛的结构。Tc升高的机制尚不清楚。目前的PZT基三元钙钛矿薄膜是一种奇特的材料。本文介绍了结构和奇异的铁电性能的关系，可能的应用压电MEMS。
Heteroepitaxial thin films of PZT-based ternary perovskite, xPb(Mn, Nb)O3-(1−x)PZT, were fabricated by magnetron sputtering on (001)SrTiO3 and (001)MgO substrates. The heteroepitaxial thin films showed single c-domain /single crystal structure and exhibit hard piezoelectric behavior with high Ec, Ec>180kV/cm, at x=0.06 for the film thickness, 300nm–5mm. The ternary perovskite thin films showed relaxed structure at the film thickness > 0.5mm. However, Curie temperature Tc is 600°C which is 250°C higher than bulk ceramic values. The sputtered thin films exhibit remnant polarization being as high as 100mC/cm2. The in-plane compression model is ruled out for a mechanism of the present higher Tc phenomena, since the sputtered thin films show relaxed structure. The mechanism of the higher Tc is unclear. The present thin films of PZT-based ternary perovskite are exotic materials. This paper describes the structure and the exotic ferroelectric properties in relation to the possible application for piezoelectric MEMS.