Microscopic mechanism of the removal of carbon-associated defects at a SiO2/SiC interface due to phosphorus treatment
Microscopic mechanism of the removal of carbon-associated defects at a SiO2/SiC interface due to phosphorus treatment
复制标题
磷处理去除 SiO2/SiC 界面碳相关缺陷的微观机制
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
and Atsushi Oshiyama
中科院分区：
文献类型：
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作者：
Takuma Kobayashi;Yu-ichiro Matsushita;Tsunenobu Kimoto;and Atsushi Oshiyama
