High-throughput characterization of metal electrode performance for electric-field-induced resistance switching in metal/Pr0.7Ca0.3MnO3/metal structures
High-throughput characterization of metal electrode performance for electric-field-induced resistance switching in metal/Pr0.7Ca0.3MnO3/metal structures
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DOI：
10.1002/adma.200601957
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发表时间：
2007-07-02
影响因子：
29.4
通讯作者：
Koinuma, Hideomi
中科院分区：
文献类型：
--
作者：
Tsubouchi, Kenta;Ohkubo, Isao;Koinuma, Hideomi
使用外延薄膜器件演示了电极材料的高通量探索，以确定电阻随机存取存储器的合适电极材料。在I-V测量中，仅含有Al的电极对显示电阻切换（见图）。在四探针测量开关的消失表明，开关附近的Al电极和Pr0.7Ca0.3MnO3膜的界面发生。
High-throughput exploration of electrode materials is demonstrated with an epitaxial thin-film device to determine the appropriate electrode materials for a resistance random access memory. In I-V measurements, only electrode pairs containing Al showed resistance switching (see figure). The disappearance of switching in the fourprobe measurements suggests that switching occurs near the interface of the Al electrode and the Pr0.7Ca0.3MnO3 film.