Enhancement of ultraviolet light responsivity of a pentacene phototransistor by introducing photoactive molecules into a gate dielectric
Enhancement of ultraviolet light responsivity of a pentacene phototransistor by introducing photoactive molecules into a gate dielectric
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DOI:
10.7567/jjap.53.02bb03
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发表时间:
2014-01
影响因子:
1.5
通讯作者:
T. T. Dao-T.;T. Matsushima;M. Murakami;K. Ohkubo;S. Fukuzumi;H. Murata
中科院分区:
文献类型:
--
作者:
T. T. Dao-T.;T. Matsushima;M. Murakami;K. Ohkubo;S. Fukuzumi;H. Murata
We demonstrated a new approach to fabricate an ultraviolet (UV) photodetector with a pentacene transistor structure where photoactive molecules of 6-[4′-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) were introduced into a poly(methyl methacrylate) (PMMA) gate dielectric. DPA-CM molecules strongly absorb UV light and form stable charge-separation states. When a negative gate voltage was scanned to a gate electrode of the transistor, the charge-separation states of DPA-CM molecules were converted into free electrons and holes. The free electrons traversed and subsequently reached an interface of the PMMA:DPA-CM layer and a polystyrene buffer layer, inducing accumulation of additional holes in a pentacene channel. Therefore, under 2.54 mW/cm2 of 365 nm UV irradiation, a marked increase in drain current by 6.1 × 102 times were obtained from the transistor. Moreover, the phototransistor exhibited a high light responsivity of 0.12 A/W which is about one order of magnitude larger than that of a conventional pentacene phototransistor [Lucas et al., Thin Solid Films 517, 280 (2009)]. This result will be useful for manufacturing of a high-performance UV photodetector.