G′ band Raman lineshape analysis in graphitic foams

G′ band Raman lineshape analysis in graphitic foams
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DOI:
10.1016/j.vibspec.2007.08.002
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发表时间:
2007-11-20
影响因子:
2.5
通讯作者:
Dresselhaus, M. S.
Dresselhaus, M. S.
中科院分区:
化学3区
文献类型:
--
作者:
Barros, E. B.;Souza Filho, A. G.;Dresselhaus, M. S.

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在这项工作中,我们通过分析G波段线形对激发激光能量和研究区域拓扑结构的依赖,扩展了使用拉曼光谱来表征石墨泡沫的研究。发现G波段线形与层错的存在密切相关。在近似于2450 cm(-1)处的TO + LA组合模式对评估偏度的贡献包括需要考虑的激发能依赖性。我们分析了如何考虑这一影响,从而很好地评价了G带偏度对叠加错误存在的依赖性。我们还讨论了石墨泡沫中层错的存在与面内缺陷的关系。(c) 2007 Elsevier B.V.版权所有
In this work we extend the study of the use of Raman spectroscopy to characterize graphitic foams by analyzing the dependence of the G band lineshape on both the excitation laser energy and on the topology of the studied area. The G' band lineshape was found to be strongly correlated with the presence of stacking faults. The contribution of the TO + LA combination mode at similar to 2450 cm(-1) to the evaluated skewness includes an excitation energy dependence which needs to be considered. We analyze how to take this effect into consideration, thus obtaining a good evaluation of the dependence of the skewness of the G band on the presence of stacking faults. We also discuss the correlation between the presence of stacking faults and of in plane defects in graphitic foams. (c) 2007 Elsevier B.V. All rights reserved.