High-Working-Pressure Sputtering of ZnO for Stable and Efficient Perovskite Solar Cells
High-Working-Pressure Sputtering of ZnO for Stable and Efficient Perovskite Solar Cells
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DOI:
10.1021/acsaelm.8b00105
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发表时间:
2019-02
影响因子:
4.7
通讯作者:
Abhishek M. Thote;Il Jeon;Hao-Sheng Lin;Sergei Manzhos;Takafumi Nakagawa;D. Suh;Junho Hwang;Makoto Ka
中科院分区:
文献类型:
--
作者:
Abhishek M. Thote;Il Jeon;Hao-Sheng Lin;Sergei Manzhos;Takafumi Nakagawa;D. Suh;Junho Hwang;Makoto Ka
Owing to its high mobility and low sintering temperature, ZnO is a promising electron-transporting layer for flexible and tandem applications of perovskite solar cells. However, ZnO inevitably triggers the degradation of perovskite materials. Such degradation can be inhibited when ZnO films with improved stoichiometry and minimized defects are used. In this work, a high efficiency with substantial stability of ZnO-based perovskite solar cells is achieved using a high-working-pressure sputtering technique. The high-working-pressure sputtering process can produce higher quality ZnO films with fewer surface defects compared with conventional sputtering or sol–gel ZnO solution processes. A power conversion efficiency of 17.3% is recorded. In addition, the stability of these devices is significantly higher than that of the conventional ZnO-based perovskite solar cells. This work showcases that ZnO can be a good candidate for the electron-transporting layer in perovskite solar cells, particularly for flexible a...