Fermi surface of Pd2Si.
Fermi surface of Pd2Si.
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DOI：
10.1103/physrevb.49.17022
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发表时间：
1994-06
期刊：
影响因子：
--
通讯作者：
Antonov;Yavorsky;Nemoshkalenko;Jepsen;Andersen;Haanappel;Vosgerau;Joss;Wyder;Maďar;Rouault
中科院分区：
文献类型：
--
作者：
Antonov;Yavorsky;Nemoshkalenko;Jepsen;Andersen;Haanappel;Vosgerau;Joss;Wyder;Maďar;Rouault
提出了二硅化钯的费米面研究。实验上，利用 de Haas\char21{}van Alphen (dHvA) 效应研究了费米面和回旋加速器有效质量。理论上，${\mathrm{Pd}}_{2}$Si 的能带结构是使用原子球近似中的线性松饼锡轨道方法计算的。费米表面由三个小空穴、一个开孔表面和两个大电子片组成。计算出的费米面极值横截面的角度依赖性与 dHvA 实验相当一致。预计还会出现一些额外的 dHvA 振荡。
A Fermi-surface study of palladium disilicide is presented. Experimentally, the Fermi surface and the cyclotron effective masses have been studied using the de Haas\char21{}van Alphen (dHvA) effect. Theoretically, the band structure of ${\mathrm{Pd}}_{2}$Si has been calculated using the linear-muffin-tin-orbital method in the atomic-sphere approximation. The Fermi surface consists of three small hole pockets, an open hole surface, and two large electron sheets. The calculated angular dependence of the extremal cross sections of the Fermi surface is in reasonable agreement with dHvA experiments. Some additional dHvA oscillations are predicted.