High Mobility 4H-SiC MOSFET
High Mobility 4H-SiC MOSFET
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高迁移率 4H-SiC MOSFET
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
S. Olsen
中科院分区：
文献类型：
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作者：
A. OrNeill;F. Arith;J. Urresti;K. Vasilevskiy;N. Wright;S. Olsen
沟道长度为2 μm的增强型4 H-SiC MOSFET的室温场效应迁移率为125 cm<sup>2</sup>/V·s，亚阈值斜率为130 mV/dec，在300 °C温度范围内，迁移率的温度依赖性表明声子散射取代了库仑散射，器件仍保持增强型，具有高的迁移率和超过106的通断电流比.<sup></sup>所制造的器件使用的栅极叠层包括0.7 nm薄的热二氧化硅，从而减少氧化后的缺陷，和40 nm厚的Al<inf>2</inf> O<inf>3</inf>形成的原子层沉积。<inf></inf>
Enhancement mode 4H-SiC MOSFETs with a channel length of 2 μm achieved a room temperature field effect mobility of 125 cm<sup>2</sup>/V•s and a subthreshold slope of 130 mV/dec. The temperature dependence of mobility up to 300 °C indicates that phonon scattering has replaced Coulombic scattering in these devices, which remain enhancement mode with high mobility and an ON/OFF current ratio in excess of 10<sup>6</sup>. The fabricated devices utilised a gate stack comprising a 0.7 nm thin thermal SiO<inf>2</inf>, thereby reducing defects following oxidation, and a 40 nm thick Al<inf>2</inf>O<inf>3</inf> formed by atomic layer deposition.