Subpicosecond reflective electro‐optic sampling of electron‐hole vertical transport in surface‐space‐charge fields
Subpicosecond reflective electro‐optic sampling of electron‐hole vertical transport in surface‐space‐charge fields
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表面空间电荷场中电子空穴垂直传输的亚皮秒反射电光采样
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
R. Miller
中科院分区：
文献类型：
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作者：
L. Min;R. Miller
理论分析和实验证明，在反射中使用带隙以上光学探针的电光采样场瞬变的新方法与透射中的电光采样一样灵敏，灵敏度在2倍以内。该技术非常适合于界面的研究，由于倏逝场探头的表面选择性的性质。在GaAs（100）/氧化物界面的表面空间电荷场中光生电子空穴对分离的动力学研究表明，空穴载流子渡越时间快于500 fs。使用纵向电光采样光束几何形状，该技术具有50 fs的固有分辨率。
A new method of electro‐optic sampling field transients, using above‐band‐gap optical probes in reflection, is analyzed theoretically and experimentally demonstrated to be within a factor of 2 as sensitive as electro‐optic sampling in transmission. The technique is ideally suited to the study of interfaces due to the surface selective nature of the evanescent field probe. Studies of the dynamics of photogenerated electron‐hole pair separation in surface‐space‐charge fields at GaAs(100)/oxide interfaces show that the hole carrier transit time is faster than 500 fs. Using longitudinal electro‐optic sampling beam geometries, this technique has an intrinsic resolution of 50 fs.