Layout-dependent-effects-aware analytical analog placement
Layout-dependent-effects-aware analytical analog placement
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DOI：
10.1145/2744769.2744865
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发表时间：
2015-06
期刊：
影响因子：
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通讯作者：
H. Ou;Kai-Han Tseng;Jhao-Yan Liu;I-Peng Wu;Yao-Wen Chang
中科院分区：
文献类型：
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作者：
H. Ou;Kai-Han Tseng;Jhao-Yan Liu;I-Peng Wu;Yao-Wen Chang
布局相关效应（LDE）已成为现代模拟和混合信号电路设计中的一个关键问题。LDE的三个主要来源，即阱邻近度、氧化物扩散长度和氧化物-氧化物间距，显著影响器件的阈值电压和迁移率。在本文中，我们提出的第一项工作，考虑在模拟布局的三个主要来源的LDE。我们首先将三个LDE模型转化为非线性的解析布局模型。然后提出了一种基于线性偏微分方程的解析模拟布局算法，在提高电路性能的同时，有效地降低了线性偏微分方程的影响。实验结果表明，我们的布局算法可以有效地和有效地减少LDE引起的变化，提高电路性能。
Layout-dependent effects (LDEs) have become a critical issue in modern analog and mixed-signal circuit designs. The three major sources of LDEs, well proximity, length of oxide diffusion, and oxide-to-oxide spacing, significantly affect the threshold voltage and mobility of devices. In this paper, we propose the first work to consider the three major sources of LDEs during analog placement. We first transform the three LDE models into nonlinear analytical placement models. Then an LDE-aware analytical analog placement algorithm is presented to mitigate the influence of the LDEs while improving circuit performance. Experimental results show that our placement algorithm can effectively and efficiently reduce the LDE-induced variations and improve circuit performance.