Novel ZrInZnO Thin-film Transistor with Excellent Stability
Novel ZrInZnO Thin-film Transistor with Excellent Stability
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DOI：
10.1002/adma.200802246
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发表时间：
2009-01-19
影响因子：
29.4
通讯作者：
Jeong, Jae Kyeong
中科院分区：
文献类型：
--
作者：
Park, Jin-Seong;Kim, KwangSuk;Jeong, Jae Kyeong
提出了新型 ZrInZnO 半导体材料来解决有源矩阵有机发光二极管的晶体管不稳定性。 ZrInZnO薄膜采用共溅射方法制备，呈现出嵌入非晶基体中的纳米晶结构。所制造的薄膜晶体管表现出良好的电性能以及在长期偏置应力下优异的稳定性。
Novel ZrInZnO semiconductor materials to resolve transistor instability for active-matrix organic light-emitting diodes are proposed. The ZrInZnO film is prepared using a cosputtering method, and presents a nanocrystal structure embedded in an amorphous matrix. The thin-film transistors fabricated show good electrical performance as well as excellent stability under long-term bias stresses.