High-Quality Epitaxy of Ruthenium Dioxide, RuO 2 , on Rutile Titanium Dioxide, TiO 2 , by Pulsed Chemical Vapor Deposition
High-Quality Epitaxy of Ruthenium Dioxide, RuO 2 , on Rutile Titanium Dioxide, TiO 2 , by Pulsed Chemical Vapor Deposition
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DOI：
10.1021/cg301801h
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发表时间：
2013-02
影响因子：
3.8
通讯作者：
Xinwei Wang;R. Gordon
中科院分区：
文献类型：
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作者：
Xinwei Wang;R. Gordon
采用脉冲化学气相沉积技术在低温280℃下，在金红石型TiO2（011）表面制备了外延氧化钌（RuO2）薄膜。利用高分辨率x射线衍射的互易空间映射来检测外延的质量，表明沉积的RuO2薄膜具有高质量的外延。结果还表明，RuO2晶格在横向上受到衬底的充分应变，从而从四边形结构扭曲为单斜向结构。
Pulsed chemical vapor deposition was used to prepare epitaxial ruthenium dioxide (RuO2) film on rutile TiO2 (011) at low temperature 280 °C. Reciprocal space mapping by high-resolution X-ray diffraction was used to examine the quality of epitaxy, which demonstrated a high quality epitaxy of the deposited RuO2 film. The results also showed that the RuO2 lattice was fully strained by the substrate in the lateral directions and, therefore, distorted from a tetragonal to a monoclinic structure.