Bifacial Four-Terminal Perovskite/Silicon Tandem Solar Cells and Modules
Bifacial Four-Terminal Perovskite/Silicon Tandem Solar Cells and Modules
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DOI：
10.1021/acsenergylett.0c00682
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发表时间：
2020-05-08
影响因子：
22
通讯作者：
Veenstra, S.
中科院分区：
文献类型：
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作者：
Coletti, G.;Luxembourg, S. L.;Veenstra, S.
第一篇关于金属卤化物钙钛矿太阳能电池特性的论文 1 十年后，它们的效率和稳定性已大大提高。 2 人们很快意识到他们的应用超出了单结用途。事实上，钙钛矿电池技术凭借其可调谐带隙和低亚带隙吸收，为在多结器件中堆叠不同带隙的太阳能电池提供了新的机会，以克服单结器件的基本Shockley−Queisser（SQ）效率限制。 AM1 下。在 5 号辐射下，最佳带隙的限制为 33.7%，而对于通常带隙较高（1.55 eV）的钙钛矿，该限制降至 31%。 3, 4 预计钙钛矿的单结效率不会超过 26%。 5 对于晶体硅太阳能电池 (c-Si)，包括俄歇复合，理论 SQ 极限为 29.4%。 6, 7 目前，单结硅太阳能电池在实验室的效率达到了26.7%； 8, 9 在大规模生产中，太阳能电池的生产效率高达约 25%，10 主流效率约为 22%。后者每年以 0.4% 的速度增长，预计这一趋势将持续数年，但超过 24−25% 的成本可能会过于高昂。这种效率的提高对陡峭的学习率做出了重大贡献，自2006年以来，累计出货量每翻一番，硅光伏组件的销售价格平均下降39.8%11。虽然制造成本的降低也发挥了重要作用，但我们预计，当接近实际效率极限时，硅光伏行业将无法再保持这样的学习率。除了组件价格外，进一步的光伏系统成本（如安装）在很大程度上取决于面积，并且只需通过提高组件效率即可降低单位功率输出的成本。正是由于它可以帮助克服这些性能和成本限制，自 2015 年以来一直在开发金属卤化物钙钛矿硅串联器件 12，如今其功率转换效率超过
Ten years after the first paper 1 on the properties of metal halide perovskite solar cells, their efficiency and stability have increased tremendously. 2 It was quickly realized that their application goes beyond the single-junction use. Indeed, perovskite cell technology, by virtue of its tunable bandgap and low sub-bandgap absorption, offers new opportunities for stacking solar cells of different bandgap in a multijunction device to overcome the fundamental Shockley− Queisser (SQ) efficiency limit of a single-junction device. Under AM1. 5 irradiation, this limit is 33.7% for the optimal bandgap, and for perovskite with a normally somewhat higher bandgap of 1.55 eV it drops to 31%. 3, 4 It is not expected that perovskite will exceed 26% single-junction efficiency. 5 For crystalline silicon solar cells (c-Si), including Auger recombination, the theoretical SQ limit is 29.4%. 6, 7 Currently, singlejunction silicon solar cells reached an efficiency in the lab of 26.7%; 8, 9 while in mass production, solar cells are produced with efficiencies up to about 25%, 10 with main stream efficiencies of about 22%. The latter have been increasing by 0.4%/year, and this trend is expected to continue for a number of years, but it will likely become overly costly to go beyond 24− 25%. This efficiency increase has contributed significantly to the steep learning rate, which is the average reduction of Si PV module selling price for every doubling of cumulative shipment, of 39.8% 11 that has been experienced since 2006. Although the manufacturing cost reduction also plays a major role, we expect that when the practical efficiency limits are being approached, the silicon PV industry will not be able anymore to maintain such a learning rate. Aside from module price, the further PV system costs (like installation) to a large extent depend on area and are reduced per unit of power output simply by higher module efficiency. It is because of the possibility that it can help overcome both these performance and cost limitations that metal halide perovskite-on-silicon tandem devices have been under development since 2015 12 and today lead to power conversion efficiencies of over