High Responsivity and Wavelength Selectivity of GaN-Based Resonant Cavity Photodiodes
High Responsivity and Wavelength Selectivity of GaN-Based Resonant Cavity Photodiodes
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GaN基谐振腔光电二极管的高响应度和波长选择性
DOI：
10.1002/adom.201901276
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发表时间：
2020-02-17
影响因子：
9
通讯作者：
Zhao, Lixia
中科院分区：
文献类型：
--
作者：
Li, Jing;Yang, Chao;Zhao, Lixia
在自由空间可见光通信 (VLC) 等新兴技术中实施基于 InGaN 的蓝光光电二极管，需要采用变革性方法来实现超越当前硅基技术的性能增强、小型化和集成化。这项工作报告了具有高反射率横向多孔 GaN 分布式布拉格反射器的高性能 InGaN 基谐振腔光电二极管的设计和实现。 2 英寸晶圆上 GaN 的多孔化控制良好，可实现光学元件的设计和制造，从而释放氮化物半导体在多种应用中的潜力。这些谐振腔增强型光电二极管具有 12 nm 厚的光学活性区域，即使在没有任何外部施加电压的情况下，也对蓝光表现出高响应率（大约 0.1 A W-1）。此外，该器件可以作为明确波长的可见光发射器和检测器，电致发光发射和光电流响应之间的光谱重叠，满足VLC的波长选择性、热稳定性和低功耗的要求，并且具有在单芯片上集成不同功能（即光发射和检测）的潜力，无需额外的滤光片。
The implementation of blue-light photodiodes based on InGaN in emerging technologies, such as free-space visible light communication (VLC), requires transformative approaches toward enhanced performance, miniaturization, and integration beyond current Si-based technologies. This work reports on the design and realization of high-performance InGaN-based resonant cavity photodiodes with high-reflectivity lateral porous GaN distributed Bragg reflectors. The well-controlled porosification of GaN on the 2-inch wafers enables design and fabrication of optical components, unlocking the potential of nitride semiconductors for several applications. These resonant-cavity-enhanced photodiodes, which have a 12 nm-thick optically active region, exhibit a high responsivity (approximate to 0.1 A W-1) to blue-light even without any externally applied voltage. Furthermore, the device can operate as both an emitter and a detector of visible light at well-defined wavelengths with spectral overlap between the electroluminescence emission and photocurrent responsivity, meeting the requirement of wavelength selectivity, thermal stability, and low-power consumption for VLC, with potential for integration of different functionalities, that is, light emission and detection, on a single chip without additional light filters.