Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices
Auger recombination in long-wave infrared InAs/InAsSb type-II superlattices
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DOI：
10.1063/1.4939147
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发表时间：
2015-12-28
影响因子：
4
通讯作者：
Shaner, E. A.
中科院分区：
文献类型：
--
作者：
Olson, B. V.;Grein, C. H.;Shaner, E. A.
俄歇寿命是红外光电探测器的关键本征参数，因为它决定了最长的潜在少数载流子寿命，从而决定了其性能的根本限制。在这里，俄歇复合的特点是在长波红外InAs/InAsSb II型超晶格。在20 K-80 K温度范围内，利用载流子寿命数据，实验测得俄歇系数小至7.1 × 10 ~（-26）cm ~（6）/s。将数据与使用14波段K . p电子结构模型，并对具有相同禁带宽度的碲镉汞进行了计算.实验超晶格俄歇系数被发现是一个数量级小于碲镉汞。(C)2015年AIP Publishing LLC。
The Auger lifetime is a critical intrinsic parameter for infrared photodetectors as it determines the longest potential minority carrier lifetime and consequently the fundamental limitations to their performance. Here, Auger recombination is characterized in a long-wave infrared InAs/InAsSb type-II superlattice. Auger coefficients as small as 7.1 X 10(-26) cm(6)/s are experimentally measured using carrier lifetime data at temperatures in the range of 20 K-80 K. The data are compared to Auger-1 coefficients predicted using a 14-band K . p electronic structure model and to coefficients calculated for HgCdTe of the same bandgap. The experimental superlattice Auger coefficients are found to be an order-of-magnitude smaller than HgCdTe. (C) 2015 AIP Publishing LLC.