Electrolyte-Gated, High Mobility Inorganic Oxide Transistors from Printed Metal Halides
Electrolyte-Gated, High Mobility Inorganic Oxide Transistors from Printed Metal Halides
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DOI：
10.1021/am403131j
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发表时间：
2013-11-27
影响因子：
9.5
通讯作者：
Dasgupta, Subho
中科院分区：
文献类型：
--
作者：
Garlapati, Suresh Kumar;Mishra, Nilesha;Dasgupta, Subho
喷墨印刷和低电压（
Inkjet printed and low voltage (