Millimeter-sized magnetic domains in perpendicularly magnetized ferrimagnetic Mn4N thin films grown on SrTiO3
Millimeter-sized magnetic domains in perpendicularly magnetized ferrimagnetic Mn4N thin films grown on SrTiO3
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DOI：
10.7567/jjap.57.120310
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发表时间：
2018-10
影响因子：
1.5
通讯作者：
T. Gushi;L. Vila;O. Fruchart;A. Marty;S. Pizzini;J. Vogel;Fumiya Takata;Akihito Anzai;K. Toko;T. Suemasu;J. Attan'e
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作者：
T. Gushi;L. Vila;O. Fruchart;A. Marty;S. Pizzini;J. Vogel;Fumiya Takata;Akihito Anzai;K. Toko;T. Suemasu;J. Attan'e
外延层在基于畴壁的自旋电子应用中的应用常常受到钉钉位点的阻碍。在这里，我们表明，当沉积Mn4N （10 nm）外延膜时，用SrTiO3（001）衬底取代MgO（001）可以最大限度地减少失配，并获得改善的晶体质量，更锐利的开关，充分的剩磁，高各向异性和显着的毫米级磁畴，具有直而光滑的畴壁。随着人们对稀土铁磁体电流诱导畴壁运动的兴趣日益浓厚，我们发现不含稀土的Mn4N/SrTiO3构成了一个非常有前途的电流诱导畴壁运动的铁磁体体系。
The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N (10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millimeter-sized magnetic domains, with straight and smooth domain walls. In a context of rising interest for current-induced domain wall motion in rare-earth ferrimagnets, we show that Mn4N/SrTiO3, which is rare-earth free, constitutes a very promising ferrimagnetic system for current-induced domain wall motion.