Recent Progress on 1.55- $\mu{\hbox {m}}$ Dilute-Nitride Lasers
Recent Progress on 1.55- $\mu{\hbox {m}}$ Dilute-Nitride Lasers
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1.55- $mu{hbox {m}}$ 稀氮化物激光器的最新进展
DOI：
10.1109/jqe.2007.902301
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发表时间：
2007
影响因子：
2.5
通讯作者：
J. Harris
中科院分区：
文献类型：
--
作者：
S. Bank;H. Bae;L. Goddard;H. Yuen;M. Wistey;R. Kudrawiec;J. Harris
本文综述了分子束外延（MBE）生长的gaas基1.55 μ m激光器的最新进展。虽然材料生长具有挑战性，但生长窗口似乎相对较宽，并进行了详细描述。本文研究了在1.55 μ m条件下生产高质量galnassb材料的关键考虑因素，包括氮等离子体条件、氮通量中的离子去除、表面活性剂介导的生长、不同V-II比的作用、生长温度、活性区热收支、适当的退火和成分。我们发现发射可以在整个1.55 μ m通信频带内调谐，而不会影响光质量，仅改变一个参数-总增长率。这一强有力的结果得到了低阈值边缘发射激光器在1.55 μ m范围内的演示的验证，包括1.54 μ m时的阈值电流密度低至318 A/cm2。为了更好地了解器件性能的温度稳定性，还进行了z参数技术、腔长研究和频带偏移测量等附加表征。在非优化生长条件下，激光延伸至1.63 μ m。由于具有高增益、更大的可实现频带偏移范围，以及用于垂直腔面发射激光器（VCSELs）的晶格匹配AlAs-GaAs材料和天然氧化层的可用性，gaas基稀氮化物正在成为非常有前途的1.55 μ m inp基材料的替代品。事实上，这一努力已经使GaAs上的第一个电注入c波段VCSEL成为可能。
We review the recent developments in GaAs-based 1.55-mum lasers grown by molecular beam epitaxy (MBE). While materials growth is challenging, the growth window appears to be relatively broad and is described in detail. The key considerations for producing high-quality GalnNAsSb material emitting at 1.55-mum regime are examined, including the nitrogen plasma conditions, ion removal from the nitrogen flux, surfactant- mediated growth, the roles of various V-II ratios, the growth temperature, the active region thermal budget, proper annealing, and composition. We find that emission may be tuned throughout the 1.55-mum communications band without penalty to the optical quality varying only one parameter - the total growth rate. This powerful result is validated by the demonstration of low-threshold edge-emitting lasers throughout the 1.55-mum regime, including threshold current densities as low as 318 A/cm2 at 1.54 mum. Additional characterization by Z-parameter techniques, cavity length studies, and band offset measurements were performed to better understand the temperature stability of device performance. Lasing was extended as far as 1.63 mum under nonoptimized growth conditions. The GaAs-based dilute-nitrides are emerging as a very promising alternative to InP-based materials at 1.55-mum due to their high gain, greater range of achievable band offsets, as well as the availability of lattice-matched AlAs-GaAs materials and native oxide layers for vertical-cavity surface-emitting lasers (VCSELs). Indeed, this effort has enabled the first electrically injected C-band VCSEL on GaAs.