METAL-OXIDE-SEMICONDUCTOR NO2 SENSOR
METAL-OXIDE-SEMICONDUCTOR NO2 SENSOR
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DOI：
10.1016/0925-4005(95)85087-2
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发表时间：
1995-04-01
影响因子：
8.4
通讯作者：
KAJIYAMA, Y
中科院分区：
文献类型：
--
作者：
INOUE, T;OHTSUKA, K;KAJIYAMA, Y
从实用的角度研究了一种新型二氧化氮传感器。对各种金属氧化物半导体进行了研究，结果发现WO3作为NO2传感器用于空气质量监测的潜力最大。通过引入SiO2粘结剂、微处理技术、热清洗技术和采用过滤材料等方法，使二氧化氮WO3传感器的性能得到了提高，达到了实际应用的要求。
A newly developed sensor for NO2 has been investigated from a practical point of view. Various metal oxide semiconductors have been examined and as a result it is found that WO3 shows the highest potentiality as an NO2 sensor for air-quality monitoring. Several approaches, such as introducing SiO2 binder, microprocessing techniques, heat-cleaning techniques and adopting a filter material, have been carried out, and consequently the performance of the WO3 sensor for NO2 is improved enough for practical use.