Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy
Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy
复制标题
通过近场光谱法绘制单半导体量子线中的约束势的纳米级图
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
K. Ploog
中科院分区：
文献类型：
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作者：
C. Lienau;A. Richter;G. Behme;M. Sueptitz;D. Heinrich;T. Elsaesser;M. Ramsteiner;R. Nötzel;K. Ploog
利用亚波长空间分辨率的低温近场扫描光谱学直接映射了准一维约束势及其对砷化镓量子线结构载流子输运的影响。探测到量子线附近的浅非对称势垒，定量确定了其高度和宽度。我们证明了这种局部势垒对载流子输运和捕获到量子线的强烈影响，抑制了低温下的载流子捕获。
The quasi-one-dimensional confinement potential and its influence on carrier transport in a GaAs quantum wire structure are directly mapped by low-temperature near-field scanning optical spectroscopy with subwavelength spatial resolution. Shallow asymmetric potential barriers in the vicinity of the quantum wire are detected, and their height and width are determined quantitatively. We demonstrate the strong influence of such local barriers on carrier transport and trapping into the quantum wire, suppressing carrier trapping at low temperature.