Voltage controlled interfacial magnetism through platinum orbits.
Voltage controlled interfacial magnetism through platinum orbits.
复制标题
DOI：
10.1038/ncomms15848
复制
发表时间：
2017-06-23
影响因子：
16.6
通讯作者：
Suzuki Y
中科院分区：
文献类型：
--
作者：
Miwa S;Suzuki M;Tsujikawa M;Matsuda K;Nozaki T;Tanaka K;Tsukahara T;Nawaoka K;Goto M;Kotani Y;Ohkubo T;Bonell F;Tamura E;Hono K;Nakamura T;Shirai M;Yuasa S;Suzuki Y
界面处的电场暴露了有用的现象，例如晶体管中的切换功能，通过电子累积和/或电偶极子电感，我们在金属 - 二极管界面中发现了一种潜在的独特情况，因为电场在原子上是不合智的在金属中筛选效果。同步X射线抽象光谱，将磁偶极力矩诱导在铂金原子层上，我们的理论分析表明，与磁性偶然相比，电二倍偶极诱导会产生磁性偶极力矩。当前的设计使用电场诱导的旋转控制提供了超高密度的存储设备，我们的发现使材料可以设计显示了这种使用的十倍以上的各向异性能量变化，并突出了凝结物质电场控制的路径。
磁化的电场控制通常很弱，这会削弱其在此处使用超功率 - 消耗性的自旋装置。
Electric fields at interfaces exhibit useful phenomena, such as switching functions in transistors, through electron accumulations and/or electric dipole inductions. We find one potentially unique situation in a metal–dielectric interface in which the electric field is atomically inhomogeneous because of the strong electrostatic screening effect in metals. Such electric fields enable us to access electric quadrupoles of the electron shell. Here we show, by synchrotron X-ray absorption spectroscopy, electric field induction of magnetic dipole moments in a platinum monatomic layer placed on ferromagnetic iron. Our theoretical analysis indicates that electric quadrupole induction produces magnetic dipole moments and provides a large magnetic anisotropy change. In contrast with the inability of current designs to offer ultrahigh-density memory devices using electric-field-induced spin control, our findings enable a material design showing more than ten times larger anisotropy energy change for such a use and highlight a path in electric-field control of condensed matter. Electric field control of magnetization is usually weak and this hampers its application for the ultralow-power-consumption spintronic devices. Here, the authors demonstrate a mechanism to enhance the control of magnetic anisotropy by voltage-induced electric quadrupole in a metal–dielectric interface.