Synaptic behaviors mimicked in indium-zinc-oxid transistors gated by high-proton-conducting graphene oxide-based composite solid electrolytes
Synaptic behaviors mimicked in indium-zinc-oxid transistors gated by high-proton-conducting graphene oxide-based composite solid electrolytes
复制标题
由高质子传导氧化石墨烯基复合固体电解质门控的氧化铟锌晶体管中模拟的突触行为
DOI：
10.1039/c6tc02228f
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发表时间：
2016-11-07
影响因子：
6.4
通讯作者：
Ding, Jianning
中科院分区：
文献类型：
--
作者：
Guo, Liqiang;Wen, Juan;Ding, Jianning
质子导体薄膜的大质子电导率对于基于低功率晶体管的突触应用具有重要意义。本文合成了质子电导率接近4.2x10(-3)S厘米(-1)的3-三乙氧基硅丙基丙胺氧化石墨烯(KH550-GO)固体电解质，并建议用作质子/电子混合突触晶体管的栅介质材料。研究了KH550-GO固体电解质的微观结构和电化学性能。此外，由KH550-GO选通的质子/电子混合突触晶体管可以表现出优异的电性能。最后，这种突触晶体管模拟了生物突触的双脉冲易化、兴奋性突触后电流和峰率依赖的可塑性，因此是一种有希望用于突触电子学和神经形态系统的人工突触。
The large protonic conductivity of proton conductor films is of considerable significance for low-power transistor-based synapse applications. In this work, a 3-triethoxysilylpropylamine graphene-oxide (KH550-GO) solid electrolyte with a protonic conductivity of similar to 4.2 x 10(-3) S cm(-1) is synthesized and proposed to be used as a gate dielectric material for protonic/electronic hybrid synaptic transistors. The microstructure and the electrochemical characteristics of the KH550-GO solid electrolyte are investigated. In addition, the protonic/electronic hybrid synaptic transistor gated by KH550-GO can exhibit excellent electrical performance. Finally, the paired-pulse facilitation, excitatory post-synaptic current, and spike-rate-dependent plasticity of biological synapses are mimicked by such a synaptic transistor, which is, therefore, a promising artificial synapse for synaptic electronics and neuromorphic systems.