Local Surface Potential Measurements of Carbon Nanotube FETs by Kelvin Probe Force Microscopy
Local Surface Potential Measurements of Carbon Nanotube FETs by Kelvin Probe Force Microscopy
复制标题
通过开尔文探针力显微镜测量碳纳米管 FET 的局部表面电位
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
Hirofumi Yamada
中科院分区：
文献类型：
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作者：
Y. Miyato;K. Kobayashi;K. Matsushige;Hirofumi Yamada
采用介电泳法制备了碳纳米管场效应晶体管(CN-FET)。制备了两种金属电极和钛电极的CN-FET，用于研究金属电极与纳米管之间的电性连接。利用开尔文探针力显微镜(KFM)绘制了CN-FET在工作状态下的局部表面电势图。在钛电极和单壁碳纳米管束之间的界面处出现了较大的表面电位降，并且这种表面电位降随栅极电压的变化而变化。这一结果表明，漏极边缘的肖特基势垒受栅极偏置的调制。
We fabricated carbon nanotube FETs (CN-FETs) by dielectrophoresis method. Two types of CN-FETs with either Au or Ti electrodes were prepared for the study of electrical junctions between metal electrodes and nanotubes. Local surface potential of the CN-FETs in working condition was mapped by Kelvin probe force microscopy (KFM). A large surface potential drop occurred at the interface between the Ti electrodes and the bundle of SWNTs, and this potential drop was changed by the applied gate voltage. This result suggests that the Schottky barrier at the drain edge is modulated by the gate bias.