Atomic Layer Deposition of Nanolayered Carbon Films
Atomic Layer Deposition of Nanolayered Carbon Films
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DOI：
10.3390/c7040067
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发表时间：
2021-09
期刊：
影响因子：
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通讯作者：
Zhigang Xiao;K. Kisslinger;Rebhadevi Monikandan
中科院分区：
文献类型：
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作者：
Zhigang Xiao;K. Kisslinger;Rebhadevi Monikandan
本文采用等离子体增强原子层沉积法（PE-ALD）制备了碳薄膜。使用甲烷（CH 4）作为碳前体来生长碳薄膜。通过高分辨率透射电子显微镜（TEM）、X射线光电子能谱（XPS）分析和拉曼光谱分析来分析生长的膜。分析表明，PE-ALD生长的碳膜具有非晶结构。研究发现，铜箔基底上缺陷点（纳米级孔洞或裂纹）的存在有利于纳米碳膜的形成。对纳米孔中碳膜的形成机理进行了探讨。这一发现可用于纳米碳膜或其他二维纳米材料的可控生长，同时结合现代纳米图案化技术。
In this paper, carbon thin films were grown using the plasma-enhanced atomic layer deposition (PE-ALD). Methane (CH4) was used as the carbon precursor to grow the carbon thin film. The grown film was analyzed by the high-resolution transmission electron micrograph (TEM), X-ray photoelectron spectroscopy (XPS) analysis, and Raman spectrum analysis. The analyses show that the PE-ALD-grown carbon film has an amorphous structure. It was found that the existence of defective sites (nanoscale holes or cracks) on the substrate of copper foil could facilitate the formation of nanolayered carbon films. The mechanism for the formation of nanolayered carbon film in the nanoscale holes was discussed. This finding could be used for the controlled growth of nanolayered carbon films or other two-dimensional nanomaterials while combining with modern nanopatterning techniques.