An investigation of the electrochemical properties of PVD TiN-coated SS410 in simulated PEM fuel cell environments

An investigation of the electrochemical properties of PVD TiN-coated SS410 in simulated PEM fuel cell environments
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DOI:
10.1016/j.ijhydene.2007.02.006
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发表时间:
2007-05
影响因子:
7.2
通讯作者:
Yan Wang;D. Northwood
Yan Wang;D. Northwood
中科院分区:
工程技术2区
文献类型:
--
作者:
Yan Wang;D. Northwood

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双极板是质子交换膜燃料电池的关键部件,占燃料电池堆重量和总成本的很大一部分。为了降低双极板的成本和重量,开发金属双极板以取代无孔石墨受到了相当多的关注。在这项研究中,采用 PVD ​​技术(等离子体增强反应蒸发)在马氏体不锈钢 (SS410) 上涂覆 TiN,以提高基体金属的耐腐蚀性。采用 XRD、SEM、EIS 和动电位测试来表征 TiN 涂层 SS410。为了研究这些涂层材料作为 PEMFC 阳极和阴极的适用性,在模拟阴极和阳极条件下进行了恒电位测试。模拟阳极环境为-0.1V(相对于用H 2 吹扫的SCE),模拟阴极环境为0.6V(相对于用O 2 吹扫的SCE)。在 SS410 上形成的致密 TiN 涂层大大提高了 SS410 的耐腐蚀性,因此,如果这些涂层材料还满足其他物理和机械性能要求,如界面接触电阻、轻质、高机械强度和可制造性,则有可能作为双极板材料用于 PEMFC。
Bipolar plates are a key component of PEM fuel cells, and they constitute a large portion of the weight and total cost of a fuel cell stack. In order to reduce both the cost and weight of the bipolar plates, considerable attention is being paid to developing metallic bipolar plates to replace non-porous graphite. In this study, TiN was coated on a martensitic stainless steel (SS410) using a PVD technology (plasma enhanced reactive evaporation) to increase the corrosion resistance of the base metal. XRD, SEM, EIS and potentiodynamic tests were used to characterize the TiN-coated SS410. In order to investigate the suitability of these coated materials as the anodes and cathodes in a PEMFC, potentiostatic tests were conducted under both simulated cathode and anode conditions. The simulated anode environment was -0.1V vs SCE purged with H2and the simulated cathode environment was 0.6V vs SCE purged with O2. The dense TiN coatings formed on SS410 much improved the corrosion resistance of SS410 and, thus, these coated materials could potentially be used in PEMFCs as a bipolar plate material provided they also satisfy the other physical and mechanical property requirements such as interfacial contact resistance, light weight, high mechanical strength and manufacturability.