Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications
Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications
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DOI：
10.1016/j.jcrysgro.2005.01.021
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发表时间：
2005-05-01
影响因子：
1.8
通讯作者：
Yano, M
中科院分区：
文献类型：
--
作者：
Koike, K;Hama, K;Yano, M
采用分子束外延技术在(111)取向的Si衬底上成功地生长了单相纤锌矿结构的≤x≤为0.45的锌锌矿合金薄膜。虽然含x>；0.3的合金薄膜在600℃时超过了固溶度极限，但在较低温度下生长可以有效地将固溶度极限提高到x=0.45。随着x值的增大，阴极发光峰的能量和光吸收边的能量都出现了连续的蓝移，虽然前者的能量漂移比后者短，可能是由于合金薄膜的空间不均匀所致。对光导电池的光响应测试表明，光导电池具有明显的可见盲特性，其截止波长与其x值对应的带隙能量对应。©2005 Elsevier B.V.保留所有权利。
Single-phase wurtzite Zn1-xMgxO alloy films with 0 ≤ x ≤ 0.45 were successfully grown on (111)-oriented Si substrates by molecular beam epitaxy. Although the Zn1-xMgxO alloy films with x > 0.3 exceeded the solid solubility limit at 600° C, the growth at lower temperatures was found to be effective to raise the limit up to x = 0.45. Both energies of the cathodoluminescence peak and optical absorption edge showed continuous blueshifts with increasing the x value till the solubility limit, although the shift of the former energy became shorter than that of the latter one presumably due to the spatial inhomogeneity in alloy films. Photoresponse measurement for Zn1-xMgxO/Si photoconduction cells revealed visible-blind characteristics with specific cutoff wavelengths in accordance with relevant bandgap energies to their x values. © 2005 Elsevier B.V. All rights reserved.