A 160 GHz Frequency Quadrupler based on Heterogeneous Integration of GaAs Schottky Diodes onto Silicon using SU-8 for Epitaxy Transfer
A 160 GHz Frequency Quadrupler based on Heterogeneous Integration of GaAs Schottky Diodes onto Silicon using SU-8 for Epitaxy Transfer
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DOI：
10.1109/mwsym.2018.8439536
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发表时间：
2018-06
期刊：
影响因子：
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通讯作者：
S. Nadri;Linli Xie;M. Jafari;Naser Alijabbari;M. Cyberey;N. S. Barker;A. Lichtenberger;R. Weikle
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文献类型：
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作者：
S. Nadri;Linli Xie;M. Jafari;Naser Alijabbari;M. Cyberey;N. S. Barker;A. Lichtenberger;R. Weikle
描述了一种工作频率为 160 GHz 的集成四倍频器，可产生 100 mW 的输出功率，并实现 25.5% 的峰值效率。四倍频器设计基于现有技术，由砷化镓肖特基二极管组成，外延转移到微加工硅载体上，形成异质集成芯片。该电路采用了新开发的制造工艺，消除了高温退火，并利用 SU-8 进行粘合。与之前的实施相比，新工艺提高了器件产量和可靠性。
An integrated frequency quadrupler operating at 160 GHz, producing 100 mW of output power, and achieving peak efficiency of 25.5% is described. The quadrupler design is based on prior art and consists of GaAs Schottky diodes with epitaxy transferred to a micromachined silicon carrier forming a heterogene-ously-integrated chip. A newly-developed fabrication process that eliminates high temperature annealing and utilizes SU-8 for adhesive bonding was employed to realize the circuit. The new process improves device yield and reliability compared to previous implementations.