Semiconducting properties of passive films formed on stainless steels - Influence of the alloying elements
Semiconducting properties of passive films formed on stainless steels - Influence of the alloying elements
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DOI：
10.1149/1.1838880
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发表时间：
1998-11-01
影响因子：
3.9
通讯作者：
Ferreira, MGS
中科院分区：
文献类型：
--
作者：
Hakiki, NE;Belo, MD;Ferreira, MGS
通过电容测量和光电化学研究了在磷酸盐缓冲溶液（pH 9.2）中不锈钢上形成的钝化膜。该研究针对 AISI 304 型和 316 型不锈钢以及不同铬、镍和钼含量的高纯度合金上形成的薄膜进行。俄歇分析的补充研究表明，钝化膜主要由与金属基材接触的内部铬区域和在膜/电解质界面处形成的外部氧化铁区域组成。钝化膜的半导体特性由分别为p型和n型的铬氧化物和铁氧化物的特性决定。因此，合金元素对钝化膜半导体性能的影响可以通过这两个氧化物区域中每一个的电子结构的变化来解释。
Passive films formed on stainless steels in a berate buffer solution (pH 9.2) have been investigated by capacitance measurements and photoelectrochemistry. The study was carried out on films formed on AISI type 304 and 316 stainless steels and high purity alloys with differing chromium, nickel, and molybdenum contents. Complementary research by Auger analysis shows that the passive films are composed essentially of an inner chromium region in contact with the metallic substrate and an outer iron oxide region developed at the film/electrolyte interface. The semiconducting properties of the passive films are determined by those of the constituent chromium and iron oxides which are of p-type and n-type, respectively. Thus the influence of the alloying elements on the semiconducting properties of the passive films is explained by changes in the electronic structure of each of these two oxide regions.