Bright and ultra-fast scintillation from a semiconductor?
Bright and ultra-fast scintillation from a semiconductor?
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DOI：
10.1016/j.nima.2015.07.033
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发表时间：
2016-01-01
期刊：
影响因子：
--
通讯作者：
Canning A
中科院分区：
文献类型：
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作者：
Derenzo SE;Bourret-Courshesne E;Bizarri G;Canning A
半导体发光器是值得研究的，因为它们具有所有已知发光器中最高的亮度和最短的衰减时间。此外，许多半导体具有作为主要成分的最重的稳定元素（Tl、Hg、Pb、Bi）和与沉积的能量成比例的高离子对产率。本文综述了半导体材料的闪烁特性，包括由天然缺陷、等电子杂质、施主和受主激活的半导体材料的闪烁特性，重点介绍了具有超高发光度的半导体材料（如ZnO：Zn，ZnS：Ag，Cl，CdS：Ag，Cl）和具有超快衰减时间的半导体材料（如ZnO：Ga，CdS：In）。我们讨论了与这些性质一致的潜在机制以及实现以下目标的可能性：（1）662 keV伽马射线的200，000光子/MeV和1% fwhm能量分辨率，（2）飞行时间正电子发射断层扫描的超快（ns）衰减时间和30 ps fwhm的重合分辨时间，以及（3）在低温下来自同一闪烁体的高发光度和超快衰减时间。
Semiconductor scintillators are worth studying because they include both the highest luminosities and shortest decay times of all known scintillators. Moreover, many semiconductors have the heaviest stable elements (Tl, Hg, Pb, Bi) as a major constituent and a high ion pair yield that is proportional to the energy deposited. We review the scintillation properties of semiconductors activated by native defects, isoelectronic impurities, donors and acceptors with special emphasis on those that have exceptionally high luminosities (e.g. ZnO:Zn, ZnS:Ag,Cl, CdS:Ag,Cl) and those that have ultra-fast decay times (e.g. ZnO:Ga; CdS:In). We discuss underlying mechanisms that are consistent with these properties and the possibilities for achieving (1) 200,000 photons/MeV and 1% fwhm energy resolution for 662 keV gamma rays, (2) ultra-fast (ns) decay times and coincident resolving times of 30 ps fwhm for time-of-flight positron emission tomography, and (3) both a high luminosity and an ultra-fast decay time from the same scintillator at cryogenic temperatures.