Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
复制标题
超薄 SOI 薄膜中的子带调制增强了 SOI MOSFET 的迁移率
DOI：
10.7567/ssdm.1997.b-6-1
复制
发表时间：
1997
影响因子：
1.5
通讯作者：
A. Toriumi
中科院分区：
文献类型：
--
作者：
S. Takagi;J. Koga;A. Toriumi
我们提出，SOI金属氧化物半导体场效应晶体管（MOSFET）的SOI薄膜比体MOSFET的反型层更薄，可以提供比体Si MOSFET更高的反型层迁移率，因为由于SOI薄膜的尺寸效应的子带结构的显着调制。为了检验这种器件结构对迁移率增强的有效性，进行了室温下反型层迁移率的理论计算。结果表明，SOI厚度为3nm左右的SOI MOSFET的迁移率可以高于体MOSFET的迁移率。这种迁移率的提高归因于2倍谷的占用率的增加和谷间声子散射的抑制，与2倍和4倍谷之间的能量分裂由于SOI膜的尺寸效应。
We propose that silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs) with SOI films thinner than the inversion layer of the bulk MOSFETs can provide higher inversion-layer mobility than the bulk Si MOSFETs, because of the significant modulation of the subband structure due to the size effect of the ultrathin SOI films. In order to examine the effectiveness of this device structure on the mobility enhancement, a theoretical calculation of the inversion-layer mobility at room temperature is performed. It is found that the mobility of the SOI MOSFETs with a SOI thickness of around 3 nm can be higher than that of the bulk MOSFETs. This mobility enhancement is attributed to an increase in the occupancy of the 2-fold valleys and the suppression of inter-valley phonon scattering, associated with the energy splitting between the 2-fold and the 4-fold valleys due to the size effect of the SOI films.