Single-photon light-emitting diodes based on preselected quantum dots using a deterministic lithography technique

Single-photon light-emitting diodes based on preselected quantum dots using a deterministic lithography technique
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DOI:
10.1063/1.5091751
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发表时间:
2019-02
影响因子:
4
通讯作者:
Marc Sartison;Simon Seyfferle;Sascha Kolatschek;Stefan Hepp;M. Jetter;P. Michler;S. Portalupi
Marc Sartison;Simon Seyfferle;Sascha Kolatschek;Stefan Hepp;M. Jetter;P. Michler;S. Portalupi
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Marc Sartison;Simon Seyfferle;Sascha Kolatschek;Stefan Hepp;M. Jetter;P. Michler;S. Portalupi

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在本研究中,我们开发了一种基于InP量子点的电驱动单光子LED的制造工艺,该量子点在红色光谱范围内发射,感兴趣的波长与Si APD的高效率窗口一致。确定性光刻技术允许预先选择合适的QD,这里仅在电载流子注入下操作。最后的设备,其特征在于在直流电中的微电致发光,以及在脉冲激发模式。特别地,在一个设备的脉冲激发下,已经观察到谱线的单光子发射,被识别为激子,具有$g^{(2)}_\mathrm{raw}(0)=0.42\pm0.02$,其中非零$g^{(2)}$-值主要是由光谱中的背景贡献和由于电脉冲长度的再激发过程引起的。所获得的结果构成了一个重要的一步,在制造电驱动单光子源,确定性光刻技术可以用来合理地提高设备的性能。原则上,开发的过程可以扩展到任何所需的发射器波长超过600\,\mathrm {nm}$高达电信波段。
In the present study, we developed a fabrication process of an electrically driven single-photon LED based on InP QDs emitting in the red spectral range, the wavelength of interest coinciding with the high efficiency window of Si APDs. A deterministic lithography technique allowed for the pre-selection of a suitable QD, here exclusively operated under electrical carrier injection. The final device was characterized under micro-electroluminescence in direct current, as well as in pulsed excitation mode. In particular, under pulsed excitation of one device, single-photon emission of a spectral line, identified as an exciton, has been observed with $g^{(2)}_\mathrm{raw}(0)=0.42\pm0.02$, where the non-zero $g^{(2)}$-value is mainly caused by background contribution in the spectrum and re-excitation processes due to the electrical pulse length. The obtained results constitute an important step forward in the fabrication of electrically driven single-photon sources, where deterministic lithography techniques can be used to sensibly improve the device performances. In principle, the developed process can be extended to any desired emitter wavelength above $600\,\mathrm{nm}$ up to the telecom bands.