Structural, thermal, and electrical properties of CrSi2
Structural, thermal, and electrical properties of CrSi2
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DOI：
10.1063/1.2917347
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发表时间：
2008-06
影响因子：
3.2
通讯作者：
T. Dasgupta;J. Etourneau;B. Chevalier;S. Matar;A. Umarji
中科院分区：
文献类型：
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作者：
T. Dasgupta;J. Etourneau;B. Chevalier;S. Matar;A. Umarji
采用电弧熔炼法制备了化学计量比的CrSi 2合金，并通过单轴热压成型进行了性能测试。用粉末X射线衍射法研究了CrSi 2的晶体结构。由Rietveld精修得到的晶格参数分别为a = 4.42757（7）和c = 6.36804（11）。热膨胀测量表明，在室温至800 K的温度范围内存在各向异性膨胀，αa = 14.58×10−6/K，αc = 7.51×10−6/K，αV = 12.05×10−6/K。在450-600 K温度范围内，体积热膨胀系数呈现出反常的下降.测量的电阻率ρ和热电势S具有相似的趋势，在550 K附近具有最大值。热导率的测量结果表明，从室温值10 W m−1 K−1开始，随着温度的升高，热导率单调下降。ZT值随温度的升高而增加，在所研究的温度范围内具有最大值0.18。电子能带结构的分析。
Stoichiometric CrSi2 was prepared by arc melting and compacted by uniaxial hot pressing for property measurements. The crystal structure of CrSi2 was investigated using the powder x-ray diffraction method. From the Rietveld refinement, the lattice parameters were found to be a = 4.427 57 (7) and c = 6.368 04 (11) A, respectively. The thermal expansion measurement revealed an anisotropic expansion in the temperature range from room temperature 800 K with αa = 14.58×10−6/K, αc = 7.51×10−6/K, and αV = 12.05×10−6/K. The volumetric thermal expansion coefficient shows an anomalous decrease in the temperature range of 450–600 K. The measured electrical resistivity ρ and thermoelectric power S have similar trends with a maxima around 550 K. Thermal conductivity measurements show a monotonic decrease with increasing temperature from a room temperature value of 10 W m−1 K−1. The ZT values increase with temperature and have a maximum value of 0.18 in the temperature range studied. An analysis of the electronic band structure is provided.