Strains in BaTiO3 thin film deposited onto Pt-coated Si substrate
Strains in BaTiO3 thin film deposited onto Pt-coated Si substrate
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DOI：
10.1063/1.2430915
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发表时间：
2007-01
影响因子：
4
通讯作者：
B. Dkhil;E. Defay;J. Guillan
中科院分区：
文献类型：
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作者：
B. Dkhil;E. Defay;J. Guillan
通过测量室温下BaTiO_3薄膜的晶格参数和磁滞回线，研究了镀铂硅衬底上100 nm厚BaTiO_3薄膜的铁电-顺电相变。从顺电相到铁电相的转变发生在420 K（而非无约束单晶的400 K），而薄膜沿着生长方向处于高拉伸弹性面内应变（0.34%）和高不均匀应变（0.69%）下。实验结果与最近的理论计算的比较表明，在室温下的单斜铁电相，界面“死层”起着关键作用。
The ferroelectric-paraelectric phase transition was investigated in BaTiO3 100nm thick film deposited on platinized Si substrate by measuring the lattice parameters as a function of temperature and the hysteresis loop at room temperature. The transition from paraelectric to ferroelectric phase takes place at ∼420K (instead of 400K for unconstrained single crystals), whereas the film is under high tensile elastic in-plane strain (0.34%) and high inhomogeneous strain (0.69%) along the growth direction. Comparison of the experimental results with recent theoretical calculations suggests a monoclinic ferroelectric phase at room temperature, where interface “dead layer” plays a key role.