Single crystal growth and electronic structure of Rh-doped Sr3Ir2O7
Single crystal growth and electronic structure of Rh-doped Sr3Ir2O7
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DOI：
10.1088/1674-1056/acd7d5
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发表时间：
2023-08-01
影响因子：
1.7
通讯作者：
He，Junfeng
中科院分区：
文献类型：
--
作者：
Wang，Bingqian;Peng，Shuting;He，Junfeng
Ruddlesden-Popper铱合金sr3i2o7是自旋轨道耦合Mott绝缘子。空穴掺杂sr3i2o7为研究发生在金属-绝缘体跃迁（MIT）区域附近的奇异量子现象提供了一个理想的平台。Rh取代Ir是诱导s3i2o7空穴掺杂的有效方法。然而，Sr 3 (Ir 1−x Rh x) 27单晶的最高掺杂水平仅为3%左右，与MIT区域相去甚远。在本文中，我们报道了sr3 (Ir 1−x Rh x) 2o7单晶的成功生长，掺杂水平为~ 9%。对样品进行了充分的表征，证明了单晶的高质量。对这些样品进行了输运测量，证实了MIT的趋势。电子结构也通过角分辨光发射光谱（ARPES）测量进行了检测。我们的研究结果为研究重空穴掺杂的sr3i2o7化合物提供了一个平台，也为该材料体系中空穴掺杂的MIT提供了新的见解。
Ruddlesden-Popper iridate Sr 3 Ir 2 O 7 is a spin–orbit coupled Mott insulator. Hole doped Sr 3 Ir 2 O 7 provides an ideal platform to study the exotic quantum phenomena that occur near the metal–insulator transition (MIT) region. Rh substitution of Ir is an effective method to induce hole doping into Sr 3 Ir 2 O 7. However, the highest doping level reported in Sr 3 (Ir 1− x Rh x) 2 O 7 single crystals was only around 3%, which is far from the MIT region. In this paper, we report the successful growth of single crystals of Sr 3 (Ir 1− x Rh x) 2 O 7 with a doping level of~ 9%. The samples have been fully characterized, demonstrating the high quality of the single crystals. Transport measurements have been carried out, confirming the tendency of MIT in these samples. The electronic structure has also been examined by angle-resolved photoemission spectroscopy (ARPES) measurements. Our results establish a platform to investigate the heavily hole doped Sr 3 Ir 2 O 7 compound, which also provide new insights into the MIT with hole doping in this material system.