Single-layer MoS2/graphene dispersed in amorphous carbon: towards high electrochemical performances in rechargeable lithium ion batteries
Single-layer MoS2/graphene dispersed in amorphous carbon: towards high electrochemical performances in rechargeable lithium ion batteries
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分散在无定形碳中的单层MoS2/石墨烯：实现可充电锂离子电池的高电化学性能
DOI：
10.1039/c1jm12942b
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发表时间：
2011-01-01
影响因子：
--
通讯作者：
Chen, Weixiang
中科院分区：
文献类型：
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作者：
Chang, Kun;Chen, Weixiang
本文报道了一种简单的方法，以Na 2SO 4、硫脲、氧化石墨烯和葡萄糖为原料，通过水热法合成了由单层MoS 2、石墨烯和无定形碳组成的新型纳米复合材料（SL-MoS 2/G@a-C），然后在H2/N2气氛中于800 °C退火。利用X射线衍射、场发射扫描电子显微镜和高分辨率透射电子显微镜对样品进行了系统的研究。结果表明，复合材料中的单层MoS 2和石墨烯高度均匀地分散在非晶碳中。研究了SL-MoS 2/G@a-C纳米复合材料的形成机理。结果表明，SL-MoS 2/G@a-C纳米复合材料作为锂离子电池负极材料具有很高的可逆容量、优异的循环稳定性和高倍率性能。在三种SL-MoS 2/G@a-C样品中，SL-MoS 2/G@a-C（1：1）纳米复合材料提供了最大的可逆容量（1116 mAh g−1），在250次循环后容量的衰减可以忽略不计，并且在1000 mA g−1的高电流密度下仍然保持了850 mAh g−1的高比容量和良好的循环稳定性。
Here we report a facile process to synthesize the novel nanocomposites comprised of single-layer MoS2, graphene and amorphous carbon (SL-MoS2/G@a-C) by a hydrothermal route employing sodium molybdate, sulfocarbamide, as-prepared graphene oxide and glucose as starting materials and then annealing in H2/N2 atmosphere at 800 °C. The samples were systematically investigated using X-ray diffraction, field emission scanning electron microscopy, and high-resolution transmission electron microscopy. It was demonstrated that the single-layer MoS2 and graphene in the composites dispersed highly uniformly in the amorphous carbon. The mechanism of the formation of SL-MoS2/G@a-C nanocomposites was investigated. It was found that the SL-MoS2/G@a-C nanocomposites exhibited very high reversible capacity with excellent cyclic stability and high-rate capability as anode materials of Li-ion batteries. Among three SL-MoS2/G@a-C samples, the SL-MoS2/G@a-C (1 : 1) nanocomposite delivered the largest reversible capacity (1116 mAh g−1) with negligible fading of the capacity after 250 cycles, and still retained a high specific capacity of 850 mAh g−1 and good cyclic stability at a high current density of 1000 mA g−1.