A GaN photodetector integrated structure for wavelength characterization of ultraviolet light
A GaN photodetector integrated structure for wavelength characterization of ultraviolet light
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DOI：
10.1088/0268-1242/23/9/095021
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发表时间：
2008-09
影响因子：
1.9
通讯作者：
D. G. Zhao;D. Jiang;J. Zhu;Z. Liu;S. Zhang;Hui Yang
中科院分区：
文献类型：
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作者：
D. G. Zhao;D. Jiang;J. Zhu;Z. Liu;S. Zhang;Hui Yang
提出了一种有趣的 GaN 光电探测器结构，可用于表征入射紫外光的波长。它由两个背靠背集成二极管组成，即具有不同光谱响应的p-n和p-i-n GaN紫外光电二极管。通过简单的电子电路测量光电流比值即可识别单色紫外光的波长。
An interesting GaN photodetector structure, which can be used for characterizing the wavelength of incident ultraviolet light, is proposed. It is composed of two back-to-back integrated diodes, i.e. p–n and p–i–n GaN ultraviolet photodiodes with different spectral response. The wavelength of monochromatic ultraviolet light could be identified by measuring the photocurrent ratio value through a simple electronic circuit.