GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength.
GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength.
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DOI：
10.1364/oe.16.010549
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发表时间：
2008-07
期刊：
影响因子：
3.8
通讯作者：
Cheng-Yin Wang;Liang-Yi Chen;Cheng-Pin Chen;Yun-Wei Cheng;Min-Yung Ke;Min-Yann Hsieh;Han-Ming Wu
中科院分区：
文献类型：
--
作者：
Cheng-Yin Wang;Liang-Yi Chen;Cheng-Pin Chen;Yun-Wei Cheng;Min-Yung Ke;Min-Yann Hsieh;Han-Ming Wu
介绍了一种实用的InGaN/GaN多量子阱发光二极管（LED）自组织纳米棒结构的制备工艺。纳米棒阵列是通过使用表面图案化的二氧化硅球的自然光刻，然后通过干法蚀刻来实现的。一层旋涂玻璃（SOG），其插入棒间距，用于对每个平行纳米棒LED单元进行电隔离。纳米棒LED的电致发光峰值波长对于25 mA和100 mA之间的注入电流水平几乎保持恒定，这表明量子限制斯塔克效应在纳米棒器件中被抑制。此外，从拉曼光散射分析，我们确定了在纳米结构中的晶格失配层的应变弛豫机制。
A practical process to fabricate InGaN/GaN multiple quantum well light emitting diodes (LEDs) with a self-organized nanorod structure is demonstrated. The nanorod array is realized by using nature lithography of surface patterned silica spheres followed by dry etching. A layer of spin-on-glass (SOG), which intervening the rod spacing, serves the purpose of electric isolation to each of the parallel nanorod LED units. The electroluminescence peak wavelengths of the nanorod LEDs nearly remain as constant for an injection current level between 25mA and 100mA, which indicates that the quantum confined stark effect is suppressed in the nanorod devices. Furthermore, from the Raman light scattering analysis we identify a strain relaxation mechanism for lattice mismatch layers in the nanostructure.