Model dielectric functions for native oxides on compound semiconductors
Model dielectric functions for native oxides on compound semiconductors
复制标题
模拟化合物半导体上原生氧化物的介电函数
DOI：
10.1063/1.110469
复制
发表时间：
1993
影响因子：
4
通讯作者：
S. Zollner
中科院分区：
文献类型：
--
作者：
S. Zollner
已经发现了具有八个参数的分析模型，其描述了化合物半导体GaP、GaAs、GaSb、InP、InAs和InSb上的天然或电化学生长的氧化物层在1.6至5.6 eV光子能量范围内的介电函数。这些模型函数与实验光学常数一致，在测量的精度范围内。它们将有助于半导体激光器结构、太阳能电池和其他电光器件的设计和分析。
Analytical models with eight parameters have been found which describe the dielectric functions of native or electrochemically grown oxide layers on the compound semiconductors GaP, GaAs, GaSb, InP, InAs, and InSb in the 1.6 to 5.6 eV photon energy range. These model functions agree with the experimental optical constants to within the accuracy of the measurements. They will be useful for the design and analysis of semiconductor laser structures, solar cells, and other electro‐optical devices.