Expanding multiple anion superlattice chemistry: Synthesis, structure and properties of Bi4O4SeBr2 and Bi6O6Se2Cl2
Expanding multiple anion superlattice chemistry: Synthesis, structure and properties of Bi4O4SeBr2 and Bi6O6Se2Cl2
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DOI：
10.1016/j.jssc.2022.123246
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发表时间：
2022-05-26
影响因子：
3.3
通讯作者：
Rosseinsky, M. J.
中科院分区：
文献类型：
--
作者：
Gibson, Q. D.;Newnham, J. A.;Rosseinsky, M. J.
报道了三阴离子超晶格材料Bi_4O_4SeBr_2和Bi_6O_6Se_2Cl_2的合成、结构和性质。这些材料结晶的结构，形成一系列的化合物的一部分，由堆叠的BiOCl和Bi 2 O2 Se样单位的同源系列。Bi 4 O 4SeBr 2类似于Bi 4 O 4Se 2Cl 2，而Bi 6 O 6Se 2Cl 2含有额外的Bi 2 O2 Se层，产生偏离中心的阴离子。两种材料的带隙都是间接的，E-g？= ? 1.15（5）eV，并且材料表现为具有非常低的热导率的掺杂半导体。这些材料扩展了多阴离子超晶格材料的合成范围，并且经过优化，也可能成为未来热电材料的平台。
The synthesis, structure, and properties of the three-anion superlattice materials Bi4O4SeBr2 and Bi6O6Se2Cl2 are reported. These materials crystallise in structures that form part of a homologous series of compounds comprised of stackings of BiOCl- and Bi2O2Se-like units. Bi4O4SeBr2 is analogous to Bi4O4Se2Cl2, whereas Bi6O6Se2Cl2 contains an additional Bi2O2Se layer that produces off-centred anions. The band gaps of both materials are indirect, with E-g ?= ?1.15(5) eV, and the materials behave as doped semiconductors with very low thermal conductivities. These materials expand the synthetic scope of multiple anion superlattice materials and, with optimisation, may also be platforms for future thermoelectric materials.