A Kinetic Monte Carlo approach to study transport in amorphous silicon/crystalline silicon HIT cells
A Kinetic Monte Carlo approach to study transport in amorphous silicon/crystalline silicon HIT cells
复制标题
研究非晶硅/晶体硅 HIT 电池输运的动力学蒙特卡罗方法
DOI：
10.1109/pvsc.2015.7356048
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
S. Bowden
中科院分区：
文献类型：
--
作者：
P. Muralidharan;D. Vasileska;S. Goodnick;S. Bowden
a-Si/c-Si HIT电池中的光生载流子必须穿过本征非晶硅势垒才能被收集。由于该势垒区本质上是非晶的，因此它包含许多缺陷态，因此载流子输运主要由缺陷辅助输运来描述。本工作应用动力学蒙特卡罗（KMC）方法，通过分析离散缺陷和离散载流子之间的相互作用，缺陷辅助输运。我们探讨的“跳跃”性质的运输通过缺陷考虑声子的影响。声子的加入使我们能够研究载流子注入和提取的非等能跃迁。一旦载流子“跳跃”通过势垒，它们就通过三种主要机制被提取，即声子发射、Poole-Frenkel发射和声子辅助缺陷发射。模拟结果表明，Poole-Frenkel发射和声子发射可以忽略不计，而通过声子辅助跳跃的载流子发射是主要的提取模式。分析了不同缺陷分布对输运的影响。
The photogenerated carriers in a-Si/c-Si HIT cells must traverse the intrinsic amorphous silicon barrier in order to be collected. As this barrier region is amorphous in nature, it contains many defect states, and thus carrier transport is mainly described by defect assisted transport. The present work applies the Kinetic Monte Carlo (KMC) method for the defect assisted transport by analyzing the interactions between discrete defects and discrete carriers. We explore the `hopping' nature of transport via defects by considering the effect of phonons. The addition of phonons allows us to study non-iso-energetic transitions for injection and extraction of carriers. Once the carriers `hop' through the barrier, they are extracted by three main mechanisms, namely, thermionic emission, Poole-Frenkel emission and phonon assisted defect emission. Simulations indicate that Poole-Frenkel emission and thermionic emission are negligible whereas emission of carriers via phonon assisted hopping is the dominant mode of extraction. The effect of different defect distributions on transport is also analyzed.
影响因子：
3
作者：
Masuko, Keiichiro;Shigematsu, Masato;Okamoto, Shingo
通讯作者：
Okamoto, Shingo