Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition
Epitaxial growth of AlN thin films on silicon (111) substrates by pulsed laser deposition
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DOI：
10.1063/1.359441
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发表时间：
1995-05
影响因子：
3.2
通讯作者：
R. Vispute;J. Narayan;Hong Wu;K. Jagannadham
中科院分区：
文献类型：
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作者：
R. Vispute;J. Narayan;Hong Wu;K. Jagannadham
Aluminum nitride thin films have been grown epitaxially on Si(111) substrates, for the first time, by pulsed laser ablation of sintered AlN target. The influence of process parameters such as laser energy density, substrate temperature, pulse repetition rate, nitrogen partial pressure, etc. on epitaxial growth has been investigated to obtain high quality AlN films. These films were characterized by Fourier transform infrared spectroscopy, Raman spectroscopy, x‐ray diffraction (Θ and ω scans) technique, high resolution transmission electron microscopy, and scanning electron microscopy. The films deposited at laser energy density in the range of 2–3 J/cm2, substrate temperature of 750 °C, and base pressure of 3×10−7 Torr are single phase and highly oriented along c axis normal to the Si(111) planes. The results of x‐ray diffraction and electron microscopy on these films clearly show the epitaxial growth of the AlN films with an orientational relationship of AlN[0001] ∥ Si[111] and AlN[2110] ∥ Si[011]. Th...
