Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates
Non-polar (11-20) GaN grown on sapphire with double overgrowth on micro-rod/stripe templates
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DOI：
10.1088/1361-6641/aaed93
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发表时间：
2018-12-01
影响因子：
1.9
通讯作者：
Wang, T.
中科院分区：
文献类型：
--
作者：
Bai, J.;Jiu, L.;Wang, T.
通过在最近开发的微棒模板或传统的定向条纹模板上的过生长，可以在蓝宝石上获得具有低缺陷密度的非极性（11-20）GaN< 1-100 >。条纹上的过度生长更有效地阻挡了非极性GaN中的BSF，但由于其过度生长的各向异性图案，很难获得平坦的GaN表面。微棒上的过度生长可以显著减少位错，同时保持光滑的样品表面。最近，我们开发了一种在蓝宝石上生长（11-20）GaN的双重过生长方法，即第一次在条纹上过生长，第二次在微棒上过生长。双过生长技术成功地利用了两种过生长的优点，进一步提高了晶体质量，这将是一种非常有前途的方法，以获得高质量的（11-20）GaN的大规模工业生产。
Non-polar (11-20) GaN with low defect density can be achieved on sapphire by means of an overgrowth on a micro-rod template recently developed, or on a conventional < 1-100 >-oriented stripe template. The overgrowth on stripes block BSFs in the nonpolar GaN more effectively, but it is difficult to obtain a flat GaN surface due to its anisotropic pattern for overgrowth. The overgrowth on micro-rods can significantly reduce dislocations, simultaneously maintaining a smooth sample surface. Very recently, we develop a double overgrowth approach to grow (11-20) GaN on sapphire, i.e. first overgrowth on stripes and second overgrowth on micro-rods. The double overgrowth technique successfully utilizes the strengths of the two kinds of overgrowths, further improving crystal quality, which will be a very promising approach to achieve high quality (11-20) GaN for large-scale industrial production.