Fabrication of p- and n-Type Field-Effect Transistors Using Poly( p-phenylenevinylene) via Water-Soluble Precursor under High-Gravity Condition
Fabrication of p- and n-Type Field-Effect Transistors Using Poly( p-phenylenevinylene) via Water-Soluble Precursor under High-Gravity Condition
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DOI：
10.1143/jjap.46.l177
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发表时间：
2007-02
影响因子：
1.5
通讯作者：
H. Kayashima;T. Yasuda;K. Fujita;T. Tsutsui
中科院分区：
文献类型：
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作者：
H. Kayashima;T. Yasuda;K. Fujita;T. Tsutsui
以水溶性前驱体聚合物为原料，在掺杂硅衬底上以十八烷基三氯硅烷处理的SiO2为绝缘层，在高重力条件下滴铸法制备了聚对苯乙烯薄膜。通过在高重力条件下制备PPV薄膜，有效地防止了聚合物溶液在疏水基底上的脱湿，获得了高质量的PPV薄膜。通过选择合适的金属源极漏极、插入V2O5缓冲层的Au源极漏极和Ca源极漏极，制备了具有顶部接触几何形状的p型和n型PPV场效应晶体管。饱和区估计的场效应空穴和电子迁移率分别为3.2×10-4和1.0×10-6 cm2 V-1 s-1。
Poly( p-phenylenevinylene) (PPV) thin films were prepared from a water-soluble precursor polymer by drop casting under a high-gravity condition on a doped silicon substrate with octadecyltrichlorosilane-treated SiO2 insulating layer. Dewetting of a polymer solution from a hydrophobic substrate was effectively prevented by preparing PPV thin films under a high-gravity condition, and high-quality PPV thin films were obtained. By choosing the appropriate source–drain metal electrodes, Au source–drain electrodes with inserted V2O5 buffer layer and Ca source–drain electrodes, p- and n-type PPV field-effect transistors with top contact geometries were fabricated. The field-effect hole and electron mobility estimated from the saturation region were 3.2×10-4 and 1.0×10-6 cm2 V-1 s-1, respectively.