Extreme Ultraviolet Transmission of Crystalline and Amorphous Silicon
Extreme Ultraviolet Transmission of Crystalline and Amorphous Silicon
复制标题
晶体和非晶硅的极紫外透过率
DOI：
10.1103/physrevlett.28.497
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发表时间：
1972
影响因子：
8.6
通讯作者：
O. P. Rustgi
中科院分区：
文献类型：
--
作者：
F. C. Brown;O. P. Rustgi
高分辨率的L II II，II吸收光谱的特点是薄膜的非晶硅和晶体硅。晶体光谱显示的功能，这是有关详细的导带结构的硅。这些特征在无定形材料中看不到，大概是因为缺乏长程有序。无定形光谱的上升没有结晶的那么陡，并且在阈值附近有一个宽峰。
High-resolution L I I I, I I absorption spectra are presented for well-characterized films of amorphous and crystalline silicon. The crystalline spectrum shows features which are related to the detailed conduction-band structure of silicon. These features are not seen for the amorphous material presumably because of the lack of long-range order. The amorphous spectrum rises less steeply than the crystalline and has a broad peak near threshold.