Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd3As2
Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd3As2
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DOI：
10.1103/physrevlett.114.117201
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发表时间：
2015-03-19
影响因子：
8.6
通讯作者：
Coldea, A. I.
中科院分区：
文献类型：
--
作者：
Narayanan, A.;Watson, M. D.;Coldea, A. I.
Cd_3As_2是一种具有极高的迁移率和非饱和线性磁电阻的三维狄拉克半金属材料，具有潜在的应用价值。我们报告磁输运和隧道二极管振荡测量Cd3As2，在磁场高达65 T和温度之间的1.5和300 K。我们发现，非饱和线性磁电阻持续到65 T，它可能是由无序效应引起的，因为它与高迁移率成比例，而不是直接与费米表面的变化，即使接近量子极限。从所观察到的量子振荡，我们确定的体积三维费米表面具有签名的狄拉克行为与非平凡的Berry相移，非常轻的有效准粒子质量，并从带结构的预测明确的偏差。在非常高的领域，我们也检测到大塞曼自旋分裂（g类似于16）的签名。
Cd3As2 is a candidate three-dimensional Dirac semimetal which has exceedingly high mobility and nonsaturating linear magnetoresistance that may be relevant for future practical applications. We report magnetotransport and tunnel diode oscillation measurements on Cd3As2, in magnetic fields up to 65 T and temperatures between 1.5 and 300 K. We find that the nonsaturating linear magnetoresistance persists up to 65 T and it is likely caused by disorder effects, as it scales with the high mobility rather than directly linked to Fermi surface changes even when approaching the quantum limit. From the observed quantum oscillations, we determine the bulk three-dimensional Fermi surface having signatures of Dirac behavior with a nontrivial Berry phase shift, very light effective quasiparticle masses, and clear deviations from the band-structure predictions. In very high fields we also detect signatures of large Zeeman spin splitting (g similar to 16).