Microfluidic Heat Exchangers for High Power Density GaN on SiC
Microfluidic Heat Exchangers for High Power Density GaN on SiC
复制标题
用于高功率密度 GaN on SiC 的微流体热交换器
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
K. Goodson
中科院分区：
文献类型：
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作者：
Y. Won;Farzad Houshmand;D. Agonafer;M. Asheghi;K. Goodson
GaN HEMT on SiC技术的高功率密度可以显著提高雷达系统的性能。不断增加的功率将需要改进与传导和对流相关的排热技术。在这里，我们探索基于SiC衬底和SiC或Cu微结构的组合冷却技术，以提高大功率器件的热性能。
The high power densities targeted for GaN HEMT on SiC technology can dramatically increase the performance of radar systems. The increasing power will require improved heat removal technologies associated with conduction and convection. Here we explore combined cooling technologies based on SiC substrate and SiC or Cu microstructures, which improve the thermal performance of high power devices.