Effect of Cr substitution on ferrimagnetic and ferroelectric properties of GaFeO3 epitaxial thin films
Effect of Cr substitution on ferrimagnetic and ferroelectric properties of GaFeO3 epitaxial thin films
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DOI：
10.1063/1.5029442
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发表时间：
2018-10
影响因子：
4
通讯作者：
T. Katayama;T. Osakabe;S. Yasui;Yosuke Hamasaki;Badari Narayana Rao;Minghui Zhang;M. Itoh
中科院分区：
文献类型：
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作者：
T. Katayama;T. Osakabe;S. Yasui;Yosuke Hamasaki;Badari Narayana Rao;Minghui Zhang;M. Itoh
为了控制多铁性材料的性能，磁性元素的替代是一种有用的技术。在本研究中，我们将GaFeO3中的Cr3+ (3d3)离子分别取代磁性Fe3+ (3d5)和非磁性Ga3+ (d10)位点，制备了GaCrxFe1−xO3和Ga1−yCryFeO3薄膜。系统地研究了Cr取代对材料磁性和介电性能的影响。所得的GaCrxFe1−xO3和Ga1−yCryFeO3薄膜（x≤1/4和y≤1/2）同时表现出铁磁性和铁电性。对于GaCrxFe1−xO3薄膜，磁转变温度（TC）和磁各向异性随x的增加而降低。另一方面，对于Ga1−yCryFeO3薄膜，TC随y的增加而增加。与GaFeO3薄膜不同，cr取代的GFO薄膜在磁化温度曲线上出现峰值，在峰值附近的矫顽力场突然下降。这可能是由于Fe3+ -O-Cr3 +在反铁磁性的Fe3+ -O-Fe3 +网络中倾向于形成铁磁相互作用。此外，我们发现cr取代的GaFeO3薄膜在室温下表现出面外铁电性。为了控制多铁性材料的性能，磁性元素的替代是一种有用的技术。在本研究中，我们将GaFeO3中的Cr3+ (3d3)离子分别取代磁性Fe3+ (3d5)和非磁性Ga3+ (d10)位点，制备了GaCrxFe1−xO3和Ga1−yCryFeO3薄膜。系统地研究了Cr取代对材料磁性和介电性能的影响。所得的GaCrxFe1−xO3和Ga1−yCryFeO3薄膜（x≤1/4和y≤1/2）同时表现出铁磁性和铁电性。对于GaCrxFe1−xO3薄膜，磁转变温度（TC）和磁各向异性随x的增加而降低。另一方面，对于Ga1−yCryFeO3薄膜，TC随y的增加而增加。与GaFeO3薄膜不同，cr取代的GFO薄膜在磁化温度曲线上出现峰值，并且在峰值附近出现矫顽力场的突然下降，这可能是由于Fe3+ -O-Cr3 +偶联的形成更倾向于形成铁磁相互作用。
To control the properties of multiferroic materials, substitution of magnetic elements is a useful technique. In this study, we fabricated GaCrxFe1−xO3 and Ga1−yCryFeO3 films by substituting Cr3+ (3d3) ions in GaFeO3 for magnetic Fe3+ (3d5) and nonmagnetic Ga3+ (d10) sites, respectively. The effect of the Cr substitution on the magnetic and dielectric properties was systematically investigated. The obtained GaCrxFe1−xO3 and Ga1−yCryFeO3 films (x ≤ 1/4 and y ≤ 1/2) simultaneously exhibit ferrimagnetism and ferroelectricity. For the GaCrxFe1−xO3 films, the magnetic transition temperature (TC) and magnetic anisotropy decrease with increasing x. On the other hand, for the Ga1−yCryFeO3 films, TC increases with increasing y. Unlike the GaFeO3 film, the Cr-substituted GFO films show a peak in the magnetization versus temperature curves and exhibit a sudden decrease in the coercive field near the peak, probably due to the formation of Fe3+–O–Cr3+ coupling which prefers to form ferromagnetic interactions in the antiferromagnetic Fe3+–O–Fe3+ networks. Furthermore, we found that the Cr-substituted GaFeO3 films show out-of-plane ferroelectricity at room temperature.To control the properties of multiferroic materials, substitution of magnetic elements is a useful technique. In this study, we fabricated GaCrxFe1−xO3 and Ga1−yCryFeO3 films by substituting Cr3+ (3d3) ions in GaFeO3 for magnetic Fe3+ (3d5) and nonmagnetic Ga3+ (d10) sites, respectively. The effect of the Cr substitution on the magnetic and dielectric properties was systematically investigated. The obtained GaCrxFe1−xO3 and Ga1−yCryFeO3 films (x ≤ 1/4 and y ≤ 1/2) simultaneously exhibit ferrimagnetism and ferroelectricity. For the GaCrxFe1−xO3 films, the magnetic transition temperature (TC) and magnetic anisotropy decrease with increasing x. On the other hand, for the Ga1−yCryFeO3 films, TC increases with increasing y. Unlike the GaFeO3 film, the Cr-substituted GFO films show a peak in the magnetization versus temperature curves and exhibit a sudden decrease in the coercive field near the peak, probably due to the formation of Fe3+–O–Cr3+ coupling which prefers to form ferromagnetic interactions in the an...