Electron transport within bulk cubic boron nitride: A Monte Carlo simulation analysis
Electron transport within bulk cubic boron nitride: A Monte Carlo simulation analysis
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块状立方氮化硼内的电子传输：蒙特卡罗模拟分析
DOI：
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
S. O’Leary
中科院分区：
文献类型：
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作者：
Poppy Siddiqua;M. Shur;S. O’Leary
通过使用半经典的三谷蒙特卡罗电子输运模拟分析，我们分析了稳态和瞬态电子输运过程中发生的锌-立方相的块状氮化硼的性质。为了我们的稳态分析的目的，电子漂移速度对所施加的电场强度的依赖性进行检查。然而，对于我们的瞬态电子输运分析，我们研究了最初处于热平衡的电子系综，即，零场，响应于恒定且均匀的外加电场的突然施加。所获得的结果，对应于散装锌-氮化硼的特定情况下，然后与那些对应于一些其他化合物半导体感兴趣的III-V族氮化物半导体基因组内的对比。
Through the use of a semi-classical three-valley Monte Carlo electron transport simulation analysis, we analyze the nature of the steady-state and transient electron transport processes that occur within the zinc-blende phase of bulk boron nitride. For the purposes of our steady-state analysis, the dependence of the electron drift velocity on the applied electric field strength is examined. For our transient electron transport analysis, however, we study how an ensemble of electrons, initially in thermal equilibrium, i.e., zero-field, responds to the sudden application of a constant and uniform applied electric field. The results obtained, corresponding to the specific case of bulk zinc-blende boron nitride, are then contrasted with those corresponding to a number of other compound semiconductors of interest within the III–V nitride semiconductor genome.