Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates
Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates
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DOI：
10.1063/1.4862298
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发表时间：
2014-01-21
影响因子：
3.2
通讯作者：
Dawson, Martin D.
中科院分区：
文献类型：
--
作者：
Tian, Pengfei;McKendry, Jonathan J. D.;Dawson, Martin D.
使用生长在Si上的GaN基发光二极管（LED）外延结构，已经展示了具有45 μ m的像素直径和在类似于470 nm处的峰值发射的可单独寻址的10 × 10微像素化LED（μ LED）阵列。这些mu LED的电学和光学特性进行了比较，从相同的外延结构制造的大面积LED。在热翻转之前，mu LED可以维持高得多的电流密度，高达6.6 kA/cm（2）。此外，制造的μ LED显示出良好的像素到像素的均匀性，这表明低成本的微型显示器的潜力。此外，这些mu LED表现出高达270 MHz的高电光调制带宽，并且适用于数据传输速率高达400 Mbit/s的可见光通信。mu LED的电光调制带宽随着注入电流小于6 mA而快速增加，在注入电流为6 mA到35 mA时暂时饱和，并且随着注入电流达到110 mA而再次逐渐增加。载流子密度相关的复合过程负责在低电流下的带宽增加，电阻-电容产品确定在饱和区域中的调制带宽，并且改变mu LED的串联电阻的自加热可能导致在高电流下的进一步带宽增加。(C)2014 AIP Publishing LLC.
Using a GaN-based light emitting diode (LED) epitaxial structure grown on Si, individually addressable 10 x 10 micro-pixelated LED (mu LED) arrays with pixel diameters of 45 mu m and peak emission at similar to 470 nm have been demonstrated. The electrical and optical properties of these mu LEDs were compared with those of broad-area LEDs fabricated from the same epistructure. The mu LEDs can sustain a much higher current density, up to 6.6 kA/cm(2), before thermal rollover. Also, the fabricated mu LEDs show good pixel-to-pixel uniformity, which demonstrates potential for low-cost micro-displays. Furthermore, these mu LEDs demonstrate a high electrical-to-optical modulation bandwidth of up to similar to 270MHz and are suitable for visible light communication at data transmission rate up to 400 Mbit/s. The electrical-to-optical modulation bandwidth of the mu LEDs increases rapidly with injection currents less than similar to 6mA, temporarily saturates at injection currents of similar to 6 to similar to 35mA, and gradually increases again with injection currents up to 110mA. Carrier density dependent recombination processes are responsible for the bandwidth increase at low current, the resistance-capacitance product determines the modulation bandwidth in the saturation region, and self-heating, which changes series resistance of mu LEDs, may cause a further bandwidth increase at high current. (C) 2014 AIP Publishing LLC.